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Silicon Carbide manufacturers introduce the material layer within the furnace after silicon carbide refining
Release time: 2025-09-11

As a Silicon Carbide manufacturer, we not only mass-produce and provide high-quality, reasonably priced, and diverse silicon carbide to meet the needs of a wide range of users, but also leverage our years of understanding of Silicon Carbide to answer user questions and provide more information about it. To help more people understand the Silicon Carbide production process, this article will focus on the material layer within the furnace after silicon carbide refining.

Unreacted material, or the portion of the material that has not reached the reaction temperature during refining and does not react, only serves to maintain heat. The area within the furnace occupied by this unreacted material is called the holding zone. The methods for preparing charge in the holding zone and the reaction zone, as well as the post-refining utilization of this area, vary. A common method is to load the furnace with fresh material in a specific area of ​​the holding zone. After refining, this material is removed and mixed with the reaction material. This is called roasting material. If the unreacted material on the insulation belt is recycled, with a little coke and an appropriate amount of sawdust added to make insulation material for reuse, it is called spent material.

The material in the silicon carbide layer is actually semi-reacted material, primarily composed of unreacted carbon and silicon dioxide, which has reacted to form silicon carbide. The silicon dioxide and carbon in the silicon carbide layer are no longer in their original form, but are combined to form a gray or yellow amorphous material. However, the combination is very loose, and after cooling, it will break into powder with a light press. The silicon dioxide in the spent material has a similar particle size and shape to that before being added to the furnace, but its transparency has changed.

The binder layer is a tightly bonded material between the silicon carbide layer and the amorphous layer. It contains a high concentration of impurities such as iron, aluminum, calcium, and magnesium, reaching 5-10% when expressed as metal oxides. The binder phases are primarily unreacted silicon dioxide, carbon, the formed silicon carbide, and silicates of iron, aluminum, calcium, and magnesium. This layer of material is sometimes difficult to distinguish from silicon oxycarbide and amorphous materials.

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